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BDV67B

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The BDV67B from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 5 mA, Collector Base Voltage 120 V, Collector Cut off Current 1 to 5 mA, Collector Emitter Breakdown Voltage 100 V. Tags: Through Hole. More details for BDV67B can be seen below.

Product Specifications

Product Details

  • Part Number
    BDV67B
  • Manufacturer
    New Jersey Semiconductor
  • Description
    120 V, 16 A, Silicon NPN Bipolar Junction Transistor

General

  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    5 mA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    1 to 5 mA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    16 A
  • Pulse Collector Current
    20 A
  • DC Current Gain
    1000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    175 W
  • Output Capacitance
    300 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-3PN
  • Application
    Audio output stages and general amplfier and switching applications
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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