BDW94B

Note : Your request will be directed to New Jersey Semiconductor.

BDW94B Image

The BDW94B from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Base Emitter Saturation Voltage -4 to -2.5 V, Emitter Cut off Current -2 mA, Collector Base Voltage -80 V, Collector Cut off Current -0.1 mA. Tags: Through Hole, PNP Transistor. More details for BDW94B can be seen below.

Product Specifications

Product Details

  • Part Number
    BDW94B
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -80 V, -12 A, Silicon PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -4 to -2.5 V
  • Emitter Cut off Current
    -2 mA
  • Collector Base Voltage
    -80 V
  • Collector Cut off Current
    -0.1 mA
  • Collector Emitter Breakdown Voltage
    -80 V
  • Collector Emitter Voltage
    -80 V
  • Continuous Collector Current
    -12 A
  • Pulse Collector Current
    -15 A
  • DC Current Gain
    750 to 1000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    80 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Through Hole View all
  • Package
    TO-220C
  • Application
    Hammer drivers, Audio amplifier application
  • Note
    Darlington Transistor

Technical Documents

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