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BDX53E

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The BDX53E from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 2.5 V, Collector Base Voltage 80 V, Collector Emitter Voltage 80 V, Continuous Collector Current 8 A. Tags: Through Hole, NPN Transistor. More details for BDX53E can be seen below.

Product Specifications

Product Details

  • Part Number
    BDX53E
  • Manufacturer
    New Jersey Semiconductor
  • Description
    80 V, 8 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    2.5 V
  • Collector Base Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    8 A
  • DC Current Gain
    750
  • Industry
    Industrial, Commercial
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220
  • Note
    Darlington Transistor
View details on the manufacturer's website

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