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BU323AP

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The BU323AP from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 2.2 to 3 V, Collector Emitter Voltage 400 V, Continuous Collector Current 10 A, DC Current Gain 150 to 300. Tags: Through Hole, NPN Transistor. More details for BU323AP can be seen below.

Product Specifications

Product Details

  • Part Number
    BU323AP
  • Manufacturer
    New Jersey Semiconductor
  • Description
    400 V, 10 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    2.2 to 3 V
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    10 A
  • DC Current Gain
    150 to 300
  • Industry
    Industrial, Commercial
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-218
  • Note
    Darlington Transistor
View details on the manufacturer's website

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