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MJ10004

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MJ10004 Image

The MJ10004 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 2.5 V, Emitter Cut off Current 175 mA, Collector Cut off Current 0.25 to 5 mA, Collector Emitter Voltage 350 V. Tags: Through Hole, NPN Transistor. More details for MJ10004 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJ10004
  • Manufacturer
    New Jersey Semiconductor
  • Description
    350 V, 20 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    2.5 V
  • Emitter Cut off Current
    175 mA
  • Collector Cut off Current
    0.25 to 5 mA
  • Collector Emitter Voltage
    350 V
  • Continuous Collector Current
    20 A
  • Pulse Collector Current
    30 A
  • DC Current Gain
    40 to 600
  • Industry
    Industrial, Commercial
  • Power Dissipation
    175 W
  • Output Capacitance
    100 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-3
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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