BC847BQB-Q

Bipolar Junction Transistor by Nexperia (451 more products)

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BC847BQB-Q Image

The BC847BQB-Q from Nexperia is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 760 to 900 mV, Emitter Cut off Current 100 nA, Collector Base Voltage 50 V, Collector Cut off Current 0.015 to 5 µA. Tags: Surface Mount, NPN Transistor. More details for BC847BQB-Q can be seen below.

Product Specifications

Product Details

  • Part Number
    BC847BQB-Q
  • Manufacturer
    Nexperia
  • Description
    45 V, 0.1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    760 to 900 mV
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    50 V
  • Collector Cut off Current
    0.015 to 5 µA
  • Collector Emitter Breakdown Voltage
    45 V
  • Collector Emitter Voltage
    45 V
  • Continuous Collector Current
    0.1 A
  • Pulse Collector Current
    200 mA
  • DC Current Gain
    200 to 450
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Automotive, Industrial, Commercial
  • Power Dissipation
    340 to 420 mW
  • Output Capacitance
    1.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT8015
  • Application
    General-purpose switching and amplification, Space restricted applications
  • Dimension
    1.1 x 1 x 0.48 mm

Technical Documents