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BC856W-Q

Bipolar Junction Transistor by Nexperia
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The BC856W-Q from Nexperia is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Base Emitter Saturation Voltage -850 to -700 mV, Emitter Cut off Current -100 nA, Collector Base Voltage -80 V, Collector Cut off Current -4 uA. Tags: Surface Mount, PNP Transistor. More details for BC856W-Q can be seen below.

Product Specifications

Product Details

  • Part Number
    BC856W-Q
  • Manufacturer
    Nexperia
  • Description
    -65 V, -0.1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -850 to -700 mV
  • Emitter Cut off Current
    -100 nA
  • Collector Base Voltage
    -80 V
  • Collector Cut off Current
    -4 uA
  • Collector Emitter Breakdown Voltage
    -65 V
  • Collector Emitter Voltage
    -65 V
  • Continuous Collector Current
    -0.1 A
  • Pulse Collector Current
    -200 mA
  • DC Current Gain
    125 to 475
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Automotive, Industrial, Commercial
  • Power Dissipation
    200 mW
  • Output Capacitance
    3 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT323
  • Application
    General-purpose switching and amplification, Space restricted applications
  • Dimension
    2 x 1.25 x 0.95 mm

Technical Documents
View details on the manufacturer's website

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