Bipolar Junction Transistor by Nexperia (553 more products)

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BSR43,115 Image

The BSR43, 115 from Nexperia is an NPN Medium Power Transistor that is ideal for linear voltage regulators, low-side switches, battery-driven devices, MOSFET drivers, amplifiers, and power management applications. It has a saturated collector-emitter voltage of up to 0.25 V, a collector-emitter voltage of 80 V, and a collector-base voltage of less than 90 V. This transistor has a collector current of up to 1 A and power dissipation of less than 1.35 W. It can handle a high amount of current and supports low voltage. This NPN transistor is available in a surface-mount package that measures 4.5 x 2.5 x 1.5 mm.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
  • Description
    80 V NPN Medium Power Transistor for MOSFET Drive Applications


  • Type
    NPN Transistor
  • Polarity
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    90 V
  • Collector Cut off Current
    50 µA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    2 A
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1.35 W
  • Output Capacitance
    12 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Application
    Linear voltage regulators, High-side switches, Battery-driven devices, MOSFET drivers, Amplifiers
  • Dimension
    4.5 x 2.5 x 1.5 mm

Technical Documents