2N6491G

Bipolar Junction Transistor by onsemi (120 more products)

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2N6491G Image

The 2N6491G from onsemi is a Complementary Silicon PNP Plastic Power Transistor that is ideal for use in general−purpose amplifiers and switching applications. It has a collector-emitter voltage of up to 80 V, a base-emitter voltage of 5 V, and a saturated collector-emitter voltage of 1.3 V. This RoHS-compliant transistor has a base current of up to 5 A and a collector current of less than 15 A. It has high DC current gain and current gain-bandwidth product. This power transistor is available in a through-hole package.

Product Specifications

Product Details

  • Part Number
    2N6491G
  • Manufacturer
    onsemi
  • Description
    80 V Complementary Silicon PNP Plastic Power Transistor for Switching Applications

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    90 V
  • Collector Cut off Current
    1 to 5 mA
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    15 A
  • Gain Bandwidth Product
    5 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    75 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Application
    General - purpose amplifier and switching applications

Technical Documents