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2N6517TA

Bipolar Junction Transistor by onsemi
120 more product from this company
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2N6517TA Image

The 2N6517TA from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.9 to 0.75 V, Emitter Cut off Current 50 nA, Collector Base Voltage 350 V, Collector Cut off Current 50 nA. Tags: Through Hole, NPN Transistor. More details for 2N6517TA can be seen below.

Product Specifications

Product Details

  • Part Number
    2N6517TA
  • Manufacturer
    onsemi
  • Description
    350 V, 0.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.9 to 0.75 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    350 V
  • Collector Cut off Current
    50 nA
  • Collector Emitter Breakdown Voltage
    350 V
  • Collector Emitter Voltage
    350 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    20
  • Gain Bandwidth Product
    40 to 200 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    625 W
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website

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