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2SA1419S-TD-E

Bipolar Junction Transistor by onsemi
120 more product from this company
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2SA1419S-TD-E Image

The 2SA1419S-TD-E from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.85 to 1.2 V, Emitter Cut off Current 1 uA, Collector Base Voltage 180 V, Collector Cut off Current 1 uA. Tags: Surface Mount, PNP Transistor. More details for 2SA1419S-TD-E can be seen below.

Product Specifications

Product Details

  • Part Number
    2SA1419S-TD-E
  • Manufacturer
    onsemi
  • Description
    160 V, 1.5 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.85 to 1.2 V
  • Emitter Cut off Current
    1 uA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    1 uA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    1.5 A
  • Pulse Collector Current
    2.5 A
  • DC Current Gain
    140 to 280
  • Gain Bandwidth Product
    120 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    500 mW
  • Output Capacitance
    14 pF
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Surface Mount View all
  • Package
    SOT-89

Technical Documents
View details on the manufacturer's website

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