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2SA2013-TD-E

Bipolar Junction Transistor by onsemi
120 more product from this company
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The 2SA2013-TD-E from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.89 to 1.2 V, Emitter Cut off Current 1 uA, Collector Base Voltage 100 V, Collector Cut off Current 1 uA. Tags: Surface Mount, PNP Transistor. More details for 2SA2013-TD-E can be seen below.

Product Specifications

Product Details

  • Part Number
    2SA2013-TD-E
  • Manufacturer
    onsemi
  • Description
    100 V, 4 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.89 to 1.2 V
  • Emitter Cut off Current
    1 uA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    1 uA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    4 A
  • Pulse Collector Current
    7 A
  • DC Current Gain
    200 to 560
  • Gain Bandwidth Product
    400 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    3.5 W
  • Output Capacitance
    15 pF
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Surface Mount View all
  • Package
    SOT-89
  • Application
    Relay drivers, lamp drivers, motor drivers

Technical Documents
View details on the manufacturer's website

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