2SA2029M3T5G

Bipolar Junction Transistor by onsemi (120 more products)

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2SA2029M3T5G Image

The 2SA2029M3T5G from onsemi is an Automotive-Qualified PNP Silicon Bipolar Transistor that is ideal for general-purpose amplifier applications. It has an emitter-base voltage of up to -6 V, a collector-emitter voltage of -50 V, and a collector-base voltage of less than -60 V. This transistor has a collector current of up to -100 mA and a power dissipation of less than 265 mW. It has a low saturated collector-emitter voltage and high hfe (beta) value, which results in improved current amplification without compromising on efficiency. This AEC-Q101-qualified transistor reduces overall board space and enables low-power surface mount applications. It is available in a surface-mount package that measures 1.15 x 1.15 mm.

Product Specifications

Product Details

  • Part Number
    2SA2029M3T5G
  • Manufacturer
    onsemi
  • Description
    Automotive-Qualified Silicon Bipolar PNP Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -6 V
  • Emitter Cut off Current
    0.1 uA
  • Collector Base Voltage
    -60 V
  • Collector Cut off Current
    0.5 nA
  • Collector Emitter Breakdown Voltage
    -50 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    -100 mA
  • DC Current Gain
    120 to 560
  • Gain Bandwidth Product
    140 MHz
  • Industry
    Commercial, Industrial, Automotive
  • Power Dissipation
    265 mW
  • Output Capacitance
    3.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT-723
  • Application
    General - purpose amplifier and switching applications
  • Dimension
    1.15 x 1.15 mm

Technical Documents