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2SB1215S-TL-E

Bipolar Junction Transistor by onsemi
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2SB1215S-TL-E Image

The 2SB1215S-TL-E from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.9 to 1.2 V, Emitter Cut off Current 1 uA, Collector Base Voltage 120 V, Collector Cut off Current 1 µA. Tags: Surface Mount, PNP Transistor. More details for 2SB1215S-TL-E can be seen below.

Product Specifications

Product Details

  • Part Number
    2SB1215S-TL-E
  • Manufacturer
    onsemi
  • Description
    100 V, 3 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.9 to 1.2 V
  • Emitter Cut off Current
    1 uA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    1 µA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    3 A
  • Pulse Collector Current
    6 A
  • DC Current Gain
    140 to 280
  • Gain Bandwidth Product
    130 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    20 W
  • Output Capacitance
    40 pF
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Surface Mount View all
  • Package
    TO-252
  • Application
    Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

Technical Documents
View details on the manufacturer's website

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