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2SC3649S-TD-E

Bipolar Junction Transistor by onsemi (120 more products)
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2SC3649S-TD-E Image

The 2SC3649S-TD-E from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.85 to 1.2 V, Emitter Cut off Current 1 uA, Collector Base Voltage 180 V, Collector Cut off Current 1 µA. Tags: Surface Mount, NPN Transistor. More details for 2SC3649S-TD-E can be seen below.

Product Specifications

Product Details

  • Part Number
    2SC3649S-TD-E
  • Manufacturer
    onsemi
  • Description
    160 V, 1.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.85 to 1.2 V
  • Emitter Cut off Current
    1 uA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    1 µA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    1.5 A
  • Pulse Collector Current
    2.5 A
  • DC Current Gain
    140 to 280
  • Gain Bandwidth Product
    120 MHz
  • Power Dissipation
    1.5 W
  • Output Capacitance
    14 pF
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT-89

Technical Documents
View details on the manufacturer's website
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