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2SD1060S-1E

Bipolar Junction Transistor by onsemi
120 more product from this company
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2SD1060S-1E Image

The 2SD1060S-1E from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Emitter Cut off Current 0.1 mA, Collector Base Voltage 60 V, Collector Cut off Current 0.1 mA, Collector Emitter Breakdown Voltage 50 V. Tags: Through Hole, NPN Transistor. More details for 2SD1060S-1E can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD1060S-1E
  • Manufacturer
    onsemi
  • Description
    50 V, 5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Emitter Cut off Current
    0.1 mA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    0.1 mA
  • Collector Emitter Breakdown Voltage
    50 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    5 A
  • Pulse Collector Current
    9 A
  • DC Current Gain
    140 to 280
  • Gain Bandwidth Product
    30 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    30 W
  • Output Capacitance
    100 pF
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Through Hole View all
  • Package
    TO-220
  • Application
    Suitable for relay drivers, high-speed inverters, converters and other general large-current switching.

Technical Documents
View details on the manufacturer's website

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