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BCP56MTWG

Bipolar Junction Transistor by onsemi (120 more products)
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BCP56MTWG Image

The BCP56MTWG from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 100 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for BCP56MTWG can be seen below.

Product Specifications

Product Details

  • Part Number
    BCP56MTWG
  • Manufacturer
    onsemi
  • Description
    80 V, 1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    2 A
  • DC Current Gain
    63 to 250
  • Gain Bandwidth Product
    140 MHz
  • Industry
    Automotive, Industrial, Commercial
  • Power Dissipation
    1.5 W
  • Output Capacitance
    65 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFNW3
  • Application
    General purpose amplifier applications.

Technical Documents
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