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NSVBC850CLT1G

Bipolar Junction Transistor by onsemi
120 more product from this company
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NSVBC850CLT1G Image

The NSVBC850CLT1G from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.9 V, Collector Base Voltage 50 V, Collector Cut off Current 5 µA, Collector Emitter Breakdown Voltage 50 V. Tags: Surface Mount, NPN Transistor. More details for NSVBC850CLT1G can be seen below.

Product Specifications

Product Details

  • Part Number
    NSVBC850CLT1G
  • Manufacturer
    onsemi
  • Description
    45 V, 0.1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.9 V
  • Collector Base Voltage
    50 V
  • Collector Cut off Current
    5 µA
  • Collector Emitter Breakdown Voltage
    50 V
  • Collector Emitter Voltage
    45 V
  • Continuous Collector Current
    0.1 A
  • DC Current Gain
    420 to 800
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Automotive, Industrial, Commercial
  • Power Dissipation
    225 mW
  • Output Capacitance
    4.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-23
  • Application
    Linear and switching applications
  • Note
    AEC-Q101 Qualified

Technical Documents
View details on the manufacturer's website

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