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NSVBC857BTT1G

Bipolar Junction Transistor by onsemi (120 more products)
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NSVBC857BTT1G Image

The NSVBC857BTT1G from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 0.6 to 0.82 V, Base Emitter Saturation Voltage 0.9 V, Collector Base Voltage 50 V, Collector Cut off Current 4 µA, Collector Emitter Breakdown Voltage 50 V. Tags: Surface Mount, PNP Transistor. More details for NSVBC857BTT1G can be seen below.

Product Specifications

Product Details

  • Part Number
    NSVBC857BTT1G
  • Manufacturer
    onsemi
  • Description
    45 V, 0.1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    0.6 to 0.82 V
  • Base Emitter Saturation Voltage
    0.9 V
  • Collector Base Voltage
    50 V
  • Collector Cut off Current
    4 µA
  • Collector Emitter Breakdown Voltage
    50 V
  • Collector Emitter Voltage
    45 V
  • Continuous Collector Current
    0.1 A
  • Pulse Collector Current
    200 mA
  • DC Current Gain
    220 to 475
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Automotive, Industrial, Commercial
  • Power Dissipation
    300 mW
  • Output Capacitance
    4.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-416
  • Application
    General purpose amplifier applications.

Technical Documents
View details on the manufacturer's website
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