BC856AW_R2_00001

Bipolar Junction Transistor by PANJIT Semiconductor (356 more products)

Note : Your request will be directed to PANJIT Semiconductor.

The BC856AW_R2_00001 from PANJIT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage -0.9 to -0.7 V, Emitter Cut off Current -100 nA, Collector Base Voltage -80 V, Collector Cut off Current -4 µA. Tags: Surface Mount, PNP Transistor. More details for BC856AW_R2_00001 can be seen below.

Product Specifications

Product Details

  • Part Number
    BC856AW_R2_00001
  • Manufacturer
    PANJIT Semiconductor
  • Description
    -65 V, -0.1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    -0.9 to -0.7 V
  • Emitter Cut off Current
    -100 nA
  • Collector Base Voltage
    -80 V
  • Collector Cut off Current
    -4 µA
  • Collector Emitter Breakdown Voltage
    -65 V
  • Collector Emitter Voltage
    -65 V
  • Continuous Collector Current
    -0.1 A
  • DC Current Gain
    90 to 220
  • Gain Bandwidth Product
    200 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    250 mW
  • Output Capacitance
    4.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Application
    General purpose amplifier applications

Technical Documents