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MMBT918_R1_00001

Bipolar Junction Transistor by PANJIT Semiconductor (356 more products)
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MMBT918_R1_00001 Image

The MMBT918_R1_00001 from PANJIT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 3 V, Base Emitter Saturation Voltage 1 V, Collector Base Voltage 30 V, Collector Cut off Current 50 nA, Collector Emitter Breakdown Voltage 15 V. Tags: Surface Mount, NPN Transistor. More details for MMBT918_R1_00001 can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBT918_R1_00001
  • Manufacturer
    PANJIT Semiconductor
  • Description
    15 V, 0.05 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    3 V
  • Base Emitter Saturation Voltage
    1 V
  • Collector Base Voltage
    30 V
  • Collector Cut off Current
    50 nA
  • Collector Emitter Breakdown Voltage
    15 V
  • Collector Emitter Voltage
    15 V
  • Continuous Collector Current
    0.05 A
  • DC Current Gain
    20
  • Gain Bandwidth Product
    600 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    225 mW
  • Output Capacitance
    1.7 to 3 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23

Technical Documents
View details on the manufacturer's website
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