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MMDT2222ATB6 _R1_00001

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MMDT2222ATB6 _R1_00001 Image

The MMDT2222ATB6 _R1_00001 from Panjit Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.6 to 2 V, Collector Base Voltage 75 V, Collector Cut off Current 10 nA, Collector Emitter Breakdown Voltage 40 V. Tags: Surface Mount, NPN Transistor. More details for MMDT2222ATB6 _R1_00001 can be seen below.

Product Specifications

Product Details

  • Part Number
    MMDT2222ATB6 _R1_00001
  • Manufacturer
    Panjit Semiconductor
  • Description
    40 V, 0.6 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.6 to 2 V
  • Collector Base Voltage
    75 V
  • Collector Cut off Current
    10 nA
  • Collector Emitter Breakdown Voltage
    40 V
  • Collector Emitter Voltage
    40 V
  • Continuous Collector Current
    0.6 A
  • Gain Bandwidth Product
    300 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    200 mW
  • Output Capacitance
    8 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-563
  • Application
    General Purpose Amplifier Applications, Hand-Held Computers, PDAs
  • Note
    Configuration:- Dual

Technical Documents
View details on the manufacturer's website

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