2SA2018E3HZGTL

Bipolar Junction Transistor by ROHM Semiconductor (346 more products)

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2SA2018E3HZGTL Image

The 2SA2018E3HZGTL from ROHM Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage -6 V, Emitter Cut off Current -100 nA, Collector Base Voltage -15 V, Collector Cut off Current -100 nA, Collector Emitter Breakdown Voltage -12 V. Tags: Surface Mount, PNP Transistor. More details for 2SA2018E3HZGTL can be seen below.

Product Specifications

Product Details

  • Part Number
    2SA2018E3HZGTL
  • Manufacturer
    ROHM Semiconductor
  • Description
    -12 V, -0.5 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -6 V
  • Emitter Cut off Current
    -100 nA
  • Collector Base Voltage
    -15 V
  • Collector Cut off Current
    -100 nA
  • Collector Emitter Breakdown Voltage
    -12 V
  • Collector Emitter Voltage
    -12 V
  • Continuous Collector Current
    -0.5 A
  • Pulse Collector Current
    -1 A
  • DC Current Gain
    270 to 680
  • Gain Bandwidth Product
    260 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.15 W
  • Output Capacitance
    6.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-416
  • Application
    LOW FREQUENCY AMPLIFIER, DRIVER

Technical Documents