BSS63AHZGT116

Note : Your request will be directed to ROHM Semiconductor.

BSS63AHZGT116 Image

The BSS63AHZGT116 from ROHM Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage -6 V, Base Emitter Saturation Voltage -900 to -750 mV, Emitter Cut off Current -100 nA, Collector Base Voltage -110 V, Collector Cut off Current -50 µA. Tags: Surface Mount, PNP Transistor. More details for BSS63AHZGT116 can be seen below.

Product Specifications

Product Details

  • Part Number
    BSS63AHZGT116
  • Manufacturer
    ROHM Semiconductor
  • Description
    -100 V, -0.1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -6 V
  • Base Emitter Saturation Voltage
    -900 to -750 mV
  • Emitter Cut off Current
    -100 nA
  • Collector Base Voltage
    -110 V
  • Collector Cut off Current
    -50 µA
  • Collector Emitter Breakdown Voltage
    -100 V
  • Collector Emitter Voltage
    -100 V
  • Continuous Collector Current
    -0.1 A
  • Pulse Collector Current
    -200 mA
  • DC Current Gain
    30
  • Gain Bandwidth Product
    200 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.2 to 0.35 W
  • Output Capacitance
    3.5 to 5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    SOT-23
  • Application
    High Voltage Amplifier

Technical Documents

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