2SD2014

Bipolar Junction Transistor by Sanken Electric

Note : Your request will be directed to Sanken Electric.

The 2SD2014 from Sanken Electric is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 2 V, Emitter Cut off Current 10 µA, Collector Base Voltage 120 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for 2SD2014 can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD2014
  • Manufacturer
    Sanken Electric
  • Description
    80 V, 4 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    2 V
  • Emitter Cut off Current
    10 µA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    4 A
  • DC Current Gain
    2000
  • Gain Bandwidth Product
    75 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    25 W
  • Output Capacitance
    45 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Through Hole View all
  • Package
    TO220F-3L
  • Application
    Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose

Technical Documents

Latest Bipolar Junction Transistors

View more products