2SD2016

Bipolar Junction Transistor by Sanken Electric (63 more products)

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2SD2016 Image

The 2SD2016 from Sanken Electric is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 2 V, Emitter Cut off Current 10 µA, Collector Base Voltage 200 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for 2SD2016 can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD2016
  • Manufacturer
    Sanken Electric
  • Description
    200 V, 3 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    2 V
  • Emitter Cut off Current
    10 µA
  • Collector Base Voltage
    200 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    200 V
  • Collector Emitter Voltage
    200 V
  • Continuous Collector Current
    3 A
  • DC Current Gain
    1000 to 15000
  • Gain Bandwidth Product
    90 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    25 W
  • Output Capacitance
    40 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220F-3L
  • Application
    Igniter, Relay and General Purpose