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SFT501JR

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SFT501JR Image

The SFT501JR from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1 to 1.5 V, Emitter Cut off Current 500 nA, Collector Base Voltage 200 V, Collector Cut off Current 1 µA. Tags: Through Hole, PNP Transistor. More details for SFT501JR can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT501JR
  • Manufacturer
    Solid State Devices
  • Description
    200 V, 5 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1 to 1.5 V
  • Emitter Cut off Current
    500 nA
  • Collector Base Voltage
    200 V
  • Collector Cut off Current
    1 µA
  • Collector Emitter Breakdown Voltage
    150 to 200 V
  • Collector Emitter Voltage
    150 V
  • Continuous Collector Current
    5 A
  • DC Current Gain
    20 to 70
  • Gain Bandwidth Product
    60 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    20 W
  • Output Capacitance
    225 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-257

Technical Documents
View details on the manufacturer's website

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