SFT502/GR

Bipolar Junction Transistor by Solid State Devices (262 more products)

Note : Your request will be directed to Solid State Devices.

The SFT502/GR from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1.3 to 1.5 V, Emitter Cut off Current 500 nA, Collector Base Voltage 200 V, Collector Cut off Current 1 µA. Tags: Surface Mount, NPN Transistor. More details for SFT502/GR can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT502/GR
  • Manufacturer
    Solid State Devices
  • Description
    200 V, 5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1.3 to 1.5 V
  • Emitter Cut off Current
    500 nA
  • Collector Base Voltage
    200 V
  • Collector Cut off Current
    1 µA
  • Collector Emitter Breakdown Voltage
    150 V
  • Collector Emitter Voltage
    150 V
  • Continuous Collector Current
    5 A
  • DC Current Gain
    20 to 50
  • Gain Bandwidth Product
    70 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    10 W
  • Output Capacitance
    225 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Cerpack

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