SFT5666/39

Bipolar Junction Transistor by Solid State Devices (262 more products)

Note : Your request will be directed to Solid State Devices.

The SFT5666/39 from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.2 to 1.5 V, Emitter Cut off Current 1 µA, Collector Base Voltage 200 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for SFT5666/39 can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT5666/39
  • Manufacturer
    Solid State Devices
  • Description
    200 V, 5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.2 to 1.5 V
  • Emitter Cut off Current
    1 µA
  • Collector Base Voltage
    200 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    180 V
  • Collector Emitter Voltage
    180 V
  • Continuous Collector Current
    5 A
  • DC Current Gain
    30 to 250
  • Gain Bandwidth Product
    30 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    15 W
  • Output Capacitance
    120 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39

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