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SFT5672EM

Bipolar Junction Transistor by Solid State Devices (262 more products)
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SFT5672EM Image

The SFT5672EM from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1.5 V, Emitter Cut off Current 0.1 mA, Collector Base Voltage 250 V, Collector Cut off Current 0.1 mA. Tags: Through Hole, NPN Transistor. More details for SFT5672EM can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT5672EM
  • Manufacturer
    Solid State Devices
  • Description
    250 V, 50 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1.5 V
  • Emitter Cut off Current
    0.1 mA
  • Collector Base Voltage
    250 V
  • Collector Cut off Current
    0.1 mA
  • Collector Emitter Voltage
    130 V
  • Continuous Collector Current
    50 A
  • DC Current Gain
    10 to 100
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    116 W
  • Output Capacitance
    900 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-254

Technical Documents
View details on the manufacturer's website
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