2SA1244-Y

Bipolar Junction Transistor by Toshiba (135 more products)

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2SA1244-Y Image

The 2SA1244-Y from Toshiba is a Silicon Epitaxial PNP Transistor that is ideal for high-current switching applications. It has a collector-emitter voltage of up to -50 V, a base-emitter voltage of less than -5 V, and a saturated collector-emitter voltage of -0.4 V. This transistor has a peak collector current of up to -5 A and a power dissipation of 1 W. It facilitates rapid and responsive switching operations, boasting a high-speed switching capability and a typical switching time of 1.0 µs, contributing to enhanced overall system responsiveness. This RoHS-compliant transistor is available in a surface-mount package that measures 6.5 x 5.5 x 2.3 mm.

Product Specifications

Product Details

  • Part Number
    2SA1244-Y
  • Manufacturer
    Toshiba
  • Description
    -50 V Silicon Epitaxial PNP Transistor for Switching Applications

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -0.9 to -1.2 V
  • Emitter Cut off Current
    -1 µA
  • Collector Base Voltage
    -60 V
  • Collector Cut off Current
    -1 µA
  • Collector Emitter Breakdown Voltage
    -50 V
  • Collector Emitter Voltage
    -50 V
  • Continuous Collector Current
    -5 A
  • DC Current Gain
    30 to 240
  • Gain Bandwidth Product
    60 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1 W
  • Output Capacitance
    170 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PW-Mold
  • Application
    High Current Switching Applications .
  • Dimension
    6.5 x 5.5 x 2.3 mm
  • Note
    Weight :- 0.36 g

Technical Documents