HN1C01FU-GR,LXHF

Bipolar Junction Transistor by Toshiba (135 more products)

Note : Your request will be directed to Toshiba.

The HN1C01FU-GR,LXHF from Toshiba is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 0.1 µA, Collector Base Voltage 60 V, Collector Cut off Current 0.1 µA, Collector Emitter Voltage 50 V. Tags: Surface Mount, NPN Transistor. More details for HN1C01FU-GR,LXHF can be seen below.

Product Specifications

Product Details

  • Part Number
    HN1C01FU-GR,LXHF
  • Manufacturer
    Toshiba
  • Description
    50 V, 0.15 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    0.1 µA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    0.1 µA
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    0.15 A
  • DC Current Gain
    200 to 400
  • Gain Bandwidth Product
    80 MHz
  • Industry
    Industrial, Commercial, Automotive
  • Power Dissipation
    200 mW
  • Output Capacitance
    2 to 3.5 PF
  • Operating Temperature
    -55 to 150 Deegre C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Application
    Low-Frequency Amplifiers.
  • Note
    Weight :- 6.8 mg, AEC-Q101 Qualified, Configuration :- Dual

Technical Documents