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HN4A51J

Bipolar Junction Transistor by Toshiba
135 more product from this company
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HN4A51J Image

The HN4A51J from Toshiba is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Emitter Cut off Current -0.1 µA, Collector Base Voltage -120 V, Collector Cut off Current -0.1 µA, Collector Emitter Voltage -120 V. Tags: Surface Mount, PNP Transistor. More details for HN4A51J can be seen below.

Product Specifications

Product Details

  • Part Number
    HN4A51J
  • Manufacturer
    Toshiba
  • Description
    -120 V, -0.1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Emitter Cut off Current
    -0.1 µA
  • Collector Base Voltage
    -120 V
  • Collector Cut off Current
    -0.1 µA
  • Collector Emitter Voltage
    -120 V
  • Continuous Collector Current
    -0.1 A
  • DC Current Gain
    200 to 700
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    300 mW
  • Output Capacitance
    4 pF
  • Operating Temperature
    -55 to 150 Deegre C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-25
  • Application
    Audio Frequency General Purpose Amplifier Applications.
  • Note
    Weight :- 0.014 g, Configuration :- Dual

Technical Documents
View details on the manufacturer's website

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