TPCP8511

Bipolar Junction Transistor by Toshiba

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TPCP8511 Image

The TPCP8511 from Toshiba is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.1 V, Emitter Cut off Current 100 nA, Collector Base Voltage 100 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for TPCP8511 can be seen below.

Product Specifications

Product Details

  • Part Number
    TPCP8511
  • Manufacturer
    Toshiba
  • Description
    50 V, 3 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.1 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    50 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    3 A
  • Pulse Collector Current
    5 A
  • DC Current Gain
    120 to 400
  • Industry
    Industrial, Commercial
  • Power Dissipation
    3 W
  • Output Capacitance
    18 pF
  • Operating Temperature
    -55 to 150 Deegre C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    PS-8
  • Application
    High-Speed Switching, DC-DC Converters, Photo Flashes.
  • Note
    Weight :- 0.017 g

Technical Documents

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