TTA0001

Bipolar Junction Transistor by Toshiba

Note : Your request will be directed to Toshiba.

TTA0001 Image

The TTA0001 from Toshiba is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Emitter Cut off Current -1 µA, Collector Base Voltage -160 V, Collector Cut off Current -1 µA, Collector Emitter Breakdown Voltage -160 V. Tags: Through Hole, PNP Transistor. More details for TTA0001 can be seen below.

Product Specifications

Product Details

  • Part Number
    TTA0001
  • Manufacturer
    Toshiba
  • Description
    -160 V, -18 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Emitter Cut off Current
    -1 µA
  • Collector Base Voltage
    -160 V
  • Collector Cut off Current
    -1 µA
  • Collector Emitter Breakdown Voltage
    -160 V
  • Collector Emitter Voltage
    -160 V
  • Continuous Collector Current
    -18 A
  • Pulse Collector Current
    -35 A
  • DC Current Gain
    35 to 160
  • Gain Bandwidth Product
    30 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    150 W
  • Output Capacitance
    410 pF
  • Operating Temperature
    -55 to 150 Deegre C
  • RoHS Compliant
  • Package Type
    Through Hole View all
  • Package
    TO-3P(N)
  • Application
    Power Amplifier Applications.
  • Note
    Weight :- 4.7 g

Technical Documents

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