Bipolar Junction Transistor by Toshiba (135 more products)

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TTA014 Image

The TTA014 from Toshiba is a Silicon Epitaxial PNP Transistor that is ideal for high-speed switching and DC-DC converter applications. It has a collector-emitter voltage of up to -120 V, a base-emitter voltage of -7 V, and a saturated collector-emitter voltage of up to -1.15 V. This transistor has a Collector current (DC) of -2.5 A and a power dissipation of 2.5 W. It exhibits a high DC current gain and a low collector-emitter saturation voltage. This RoHS-compliant transistor is available in a surface-mount package that measures 9.5 x 6.5 mm.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
  • Description
    -120 V Silicon Epitaxial PNP Transistor for High-Speed Switching Applications


  • Type
    PNP Transistor
  • Polarity
  • Emitter Base Voltage
    -7 V
  • Base Emitter Saturation Voltage
    -1.15 V
  • Emitter Cut off Current
    -100 nA
  • Collector Base Voltage
    -120 V
  • Collector Cut off Current
    -100 nA
  • Collector Emitter Breakdown Voltage
    -120 V
  • Collector Emitter Voltage
    -120 V
  • Continuous Collector Current
    -2.5 A
  • Pulse Collector Current
    -5 A
  • Industry
    Industrial, Commercial
  • Power Dissipation
    2.5 W
  • Output Capacitance
    33 pF
  • Operating Temperature
    -55 to 150 Deegre C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
    New PW-Mold
  • Application
    High-Speed Switching, DC-DC Converters.
  • Dimension
    9.5 x 6.5 mm
  • Note
    Weight :- 0.36 g

Technical Documents