PHE13003C,126

Bipolar Junction Transistor by WeEN Semiconductors (32 more products)

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The PHE13003C,126 from WeEN Semiconductors is a Bipolar Junction Transistor with Base Emitter Saturation Voltage 1 to 1.2 V, Emitter Cut off Current 1 mA, Collector Base Voltage 700 V, Collector Cut off Current 0.1 to 5 mA, Collector Emitter Voltage 400 V. Tags: Through Hole, NPN Transistor. More details for PHE13003C,126 can be seen below.

Product Specifications

Product Details

  • Part Number
    PHE13003C,126
  • Manufacturer
    WeEN Semiconductors
  • Description
    400 V, 1.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Base Emitter Saturation Voltage
    1 to 1.2 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    700 V
  • Collector Cut off Current
    0.1 to 5 mA
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    1.5 A
  • Pulse Collector Current
    3 A
  • DC Current Gain
    5 to 25
  • Industry
    Industrial, Commercial
  • Power Dissipation
    2.1 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Application
    Compact fluorescent lamps (CFL), Low power electronic lighting ballasts, Off-line self-oscillating power supplies (SOPS) for battery charging

Technical Documents