The BM6GD11BFJ-LBE2 from ROHM is a Single-Channel Gate Driver IC with built-in galvanic isolation for GaN HEMTs. It requires an input voltage of 4.5-5.5 V and provides an output gate drive voltage of 4.5-6.0 V. This gate driver IC offers a maximum I/O delay time of 60 ns, a minimum input pulse width of 65 ns, and features UVLO protection on both input and output sides. It has an isolation voltage of 2500 Vrms, ensuring robust noise immunity. This gate driver IC operates over a temperature range of -40°C to +125°C. It is available in a compact SOP package that measures 4.9 x 6.0 x 1.65 mm and is ideal for use in industrial equipment, GaN HEMT gate drive, AC adapters and server power supply applications.
