Note : Your request will be directed to Hitachi Energy.
The MBN1200H45E2-H from Hitachi Energy is a IGBT with Saturated Collector Emitter Voltage 4.2 V, DC Collector Current 1200 A, Collector Emitter Voltage 4500 V. More details for MBN1200H45E2-H can be seen below.
650 V Trench and Field Stop IGBT
1700 V Silicon N-Channel IGBT
650 V Intelligent Power Module
You can now find similar products from multiple companies on everything RF.
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