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VS-GT100TP60N

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VS-GT100TP60N Image

The VS-GT100TP60N from Vishay is a IGBT with Gate Emitter Voltage 20 V, DC Collector Current 100 to 160 A, DC Forward Current 100 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for VS-GT100TP60N can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT100TP60N
  • Manufacturer
    Vishay
  • Description
    600 V ,Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT View all
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • DC Collector Current
    100 to 160 A
  • DC Forward Current
    100 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    417 W
  • Package
    INT-A-PAK
  • Package Type
    Chassis Mount View all
  • Applications
    UPS (uninterruptable power supply), Switching mode power supplies, Electronic welders
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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