TS10SW12B1-F302

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TS10SW12B1-F302 Image

The TS10SW12B1-F302 from Dynex Semiconductor is a SiC Merged PiN Schottky (MPS) Fast Diode. It has a repetitive peak reverse voltage of 1200 V and a forward current of up to 20 A. This power diode exhibits a low reverse recovery charge and high switching speed. It has a surge current of 70 A and a forward voltage of 1.70 V. This fast diode is designed for higher efficiency, with no recovery losses, making it suitable for a variety of high-voltage applications in chargers and energy storage. It is available in a through-hole package that measures 41.20 x 15.90 x 5.10 mm and is ideal for on-board chargers, battery chargers, and UPS.

Product Specifications

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Product Details

  • Part Number
    TS10SW12B1-F302
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V SiC Merged PiN Schottky Fast Diode

General

  • Types of Diode
    Schottky Barrier Diode View all
  • Configuration of Diode
    Single Diode View all
  • Technology
  • Forward Current
    10 A
  • Forward Voltage
    1.37 to 1.7 V
  • Reverse Current
    1 to 5 µA
  • Reverse Voltage
    1200 V
  • Repetitive Peak Reverse Voltage
    1200 V
  • Non-Repetitive Peak Forward Current
    70 A
  • Peak Reverse Voltage
    1200 V
  • Industry
    Industrial, Commercial
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    On Board Charger, Battery Charger, UPS
  • Package Type
    Through Hole View all
  • Total Capacitance
    42 to 735 pF

Technical Documents