e2 PowerEdge Economic Energy using Low VCEsat BJT’s
This whitepaper is about ON Semiconductor’s e2 PowerEdge family of low VCEsat Bipolar Junction Transistors. ON Semiconductor’s e2 PowerEdge family of low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra-low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high-speed switching applications where affordable efficient energy control is important. Typical applications are power management in any circuit that needs low losses.
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