Infineon introduces the OptiMOS 8 100 V power MOSFET technology, featuring application-specific optimizations for R_DS(on) -driven applications such as motor control and battery protection. Megatrends such as green mobility, robotics, and artificial intelligence are placing increasingly demanding requirements on power systems in terms of reliable load current handling.

Compared to the previous generation, OptiMOS 5, the new OptiMOS 8 delivers an improved price-performance ratio and ease of use, with up to 44 percent lower R_DS(on). This sets a new industry benchmark by enabling up to 18 percent higher peak current output in motor drive inverter applications. For static switching applications such as battery protection in battery management systems (BMS), the R_DS(on) improvement enables higher power density, reduced part count, or improved thermal performance.

As AI data centers continue to scale to higher power levels, power density requirements for battery backup units (BBUs) are also increasing. OptiMOS 8 100 V addresses this trend by enabling the highest power density for high-power BBU systems.

OptiMOS 8 100 V provides a tight ΔV_GS(th) specification of less than 0.8 V combined with low transconductance, enabling optimal current sharing and high system reliability. To address a wide range of applications, the OptiMOS 8 family is available in a broad selection of packages, including clip-based options such as the TOLL with Copper Clip and the established SuperSO8 5x6, both delivering improved thermal performance.

A recently launched reference design demonstrates these capabilities in a real-world application. Combining the OptiMOS 8 100 V with XENSIV TMR current sensors and the PSOC Control C3 microcontroller, the board implements field-oriented control (FOC) for battery-powered drone applications and is designed as an out-of-the-box solution targeting Electronic Speed Controllers (ESC).

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