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Power Electronics Industry Update This Week - 24 September 2024

September 24 2024 Newsletter - everything PE

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Weekly Edition
Date: September 24 2024
 
Sponsored by CAS 2024
 
 
Latest News this Week
News
Infineon Launches N-Channel Power MOSFETs for Switched-Mode Power Supplies

Infineon Technologies
News
Feston Unveils On-Grid Inverters for Residential and Commercial Energy Requirements

Feston
News
Diodes Incorporated Launches High Performance Active Mux Switch for Displays

Diodes Incorporated
News
Murata Unveils Multilayer Ceramic Capacitors for Space Constrained Applications

Murata
News
Coilcraft Introduces Shielded Power Inductors for DC-DC Controller Applications

Coilcraft
News
ROHM Semiconductor Unveils N-Channel MOSFETs for Automotive Applications

ROHM Semiconductor
News
Bel Power Solutions Unveils 3.6 kW AC-DC Power Supplies for High Performance Applications

Bel Power Solutions
News
NXP Semiconductor Introduces Battery Junction Box IC for Electric Vehicles

NXP Semiconductors
News
Cambridge GaN Devices Introduces 650 V Power IC for Energy Storage Applications

Cambridge GaN Devices
News
Torex Semiconductor Introduces Load Switch ICs for Backup Battery Applications

Torex Semiconductor
News
Phoenix Contact Introduces Current Transducers to Ensure Precise Measurements

Phoenix Contact
News
PCIM Expo 2025 to Promote Sustainable Energy Solutions in Power Electronics Industry

PCIM Expo 2025
News
Innoscience Introduces 650 V GaN Power Transistor for High Efficiency Power Conversion

Innoscience
News
AiT Semiconductor Unveils Current Limit Power Switch for USB Power Management

AiT Semiconductor
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New White Papers & Articles
NTC Thermistor Reliability in Automotive Battery Circuits - Vishay
Eaton capacitors dielectric performance under dc voltage stress - Eaton
Industrial Sensors: A Practical Guide to Improve Your System - Renesas
Battery Energy Storage Systems (BESSs) demand a comprehensive circuit protection strategy - Littelfuse
Power Conversion Capacitors For Harsh Environments - Knowles Precision Devices
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Featured Interview
Featured Interview
Interview with Yunji Liu Corcoran from SMC Diode Solutions
everything PE recently interviewed Yunji Liu Corcoran, Chairwoman and CEO at SMC Diode Solutions. SMC Diode Solutions specializes in designing and manufacturing semiconductor devices.Click here to learn more.
Trending BJTs
Bipolar Junction Transistor
Automotive-Qualified Silicon Bipolar PNP Transistor
Bipolar Junction Transistor  from onsemi

The 2SA2029M3T5G from onsemi is an Automotive-Qualified PNP Silicon Bipolar Transistor that is ideal for general-purpose amplifier applications. It has an emitter-base voltage of up to -6 V, a collector-emitter voltage of -50 V, and a collector-base voltage of less than -60 V. This transistor has a collector current of up to -100 mA and a power dissipation of less than 265 mW. It has a low saturated collector-emitter voltage and high hfe (beta) value.
Download Datasheet Product Details
Bipolar Junction Transistor
Automotive-Qualified Small Signal Bipolar PNP Transistor
Bipolar Junction Transistor  from Micro Commercial Components

The MMST3906HE3-TP from Micro Commercial Components is an Automotive-Qualified Small Signal Bipolar PNP Transistor that is ideal for small signal applications. It has an emitter-base voltage of up to -5 V and a collector-emitter and collector-base voltage of less than -40 V. This AEC-Q101-qualified transistor has a collector current of up to -200 mA and a power dissipation of less than 200 mW. It features an epitaxial planar die construction and is halogen-free.
Download Datasheet Product Details
Bipolar Junction Transistor
Dual PNP Transistor for General-purpose Switching Applications
Bipolar Junction Transistor  from PANJIT Semiconductor

The MMDT2907AQ_R2_00001 from PANJIT Semiconductor Dual PNP Transistor that is ideal for general-purpose switching applications. It has a collector-emitter breakdown voltage of over -60 V, a base-emitter voltage from -1.3 V to -2.6 V, and a saturated collector-emitter voltage of less than -0.4 V. This RoHS-compliant transistor has a collector current of less than -600 mA. It employs a PNP epitaxial silicon structure based on a planar design.
Download Datasheet Product Details
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Bipolar Junction Transistor
120 V Silicon Epitaxial NPN Transistor for High-Speed Switching Applications
Bipolar Junction Transistor  from Toshiba

The TTC023 from Toshiba is an NPN Bipolar Transistor that is ideal for DC-DC converters and high-speed switching applications. It has a collector-emitter breakdown voltage of over 120 V, base-emitter voltage of up to 7 V, and a saturated collector-emitter voltage of 0.05 V. This transistor has a collector current of up to 3 A and a base current of less than 0.3 A. It can switch at a high speed with a rise time of 25 ns and fall time of 170 ns.
Download Datasheet Product Details
Bipolar Junction Transistor
30 V NPN Transistor for Small Signal Applications
Bipolar Junction Transistor  from SeCoS Corporation

The KTC3265-Y from SeCoS Corporation is an NPN Small Signal Transistor that has been encapsulated with plastic. It has a collector-emitter breakdown voltage of over 30 V, an emitter-base voltage of up to 5 V, and a saturated collector-emitter voltage of less than 0.5 V. This transistor has a collector current of up to 800 mA and a power dissipation of less than 200 mW. It provides a high DC current gain for maximum performance.
Download Datasheet Product Details
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