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2N3636

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2N3636 Image

The 2N3636 from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Base Emitter Saturation Voltage 0.8 to 0.9 V, Emitter Cut off Current -50 nA, Collector Base Voltage -175 V, Collector Cut off Current -100 nA. Tags: Through Hole, PNP Transistor. More details for 2N3636 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3636
  • Manufacturer
    Comset Semiconductors
  • Description
    -175 V, -1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    0.8 to 0.9 V
  • Emitter Cut off Current
    -50 nA
  • Collector Base Voltage
    -175 V
  • Collector Cut off Current
    -100 nA
  • Collector Emitter Breakdown Voltage
    -175 V
  • Collector Emitter Voltage
    -175 V
  • Continuous Collector Current
    -1 A
  • DC Current Gain
    25 to 150
  • Gain Bandwidth Product
    150 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    5 W
  • Output Capacitance
    10 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-39

Technical Documents
View details on the manufacturer's website

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