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BDT65C

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BDT65C Image

The BDT65C from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 5 mA, Collector Base Voltage 120 V, Collector Cut off Current 2 mA, Collector Emitter Breakdown Voltage 120 V. Tags: Through Hole, NPN Transistor. More details for BDT65C can be seen below.

Product Specifications

Product Details

  • Part Number
    BDT65C
  • Manufacturer
    Comset Semiconductors
  • Description
    120 V, 12 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    5 mA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    2 mA
  • Collector Emitter Breakdown Voltage
    120 V
  • Collector Emitter Voltage
    120 V
  • Continuous Collector Current
    12 A
  • Pulse Collector Current
    20 A
  • DC Current Gain
    1000 to 15000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    125 W
  • Output Capacitance
    200 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220
  • Application
    Audio equipment, General amplifiers, Analogue switching application
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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