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BDY26 – 183T2C

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The BDY26 – 183T2C from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage 10 V, Base Emitter Saturation Voltage 1.2 V, Emitter Cut off Current 1 mA, Collector Base Voltage 300 V, Collector Cut off Current 1 mA. Tags: Through Hole, NPN Transistor. More details for BDY26 – 183T2C can be seen below.

Product Specifications

Product Details

  • Part Number
    BDY26 – 183T2C
  • Manufacturer
    Comset Semiconductors
  • Description
    300 V, 6 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    10 V
  • Base Emitter Saturation Voltage
    1.2 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    300 V
  • Collector Cut off Current
    1 mA
  • Collector Emitter Breakdown Voltage
    180 V
  • Collector Emitter Voltage
    180 V
  • Continuous Collector Current
    6 A
  • DC Current Gain
    75 to 180
  • Gain Bandwidth Product
    10 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    87.5 W
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-3

Technical Documents
View details on the manufacturer's website

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