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2N3072

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2N3072 Image

The 2N3072 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 4 V, Base Emitter Saturation Voltage 1.2 to 2 V, Emitter Cut off Current 100 µA, Collector Base Voltage 60 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for 2N3072 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3072
  • Manufacturer
    New Jersey Semiconductor
  • Description
    60 V, 0.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    4 V
  • Base Emitter Saturation Voltage
    1.2 to 2 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    12 to 130
  • Gain Bandwidth Product
    130 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.8 W
  • Output Capacitance
    10 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-18
  • Application
    General Purpose

Technical Documents
View details on the manufacturer's website

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