BDW93C

Note : Your request will be directed to New Jersey Semiconductor.

The BDW93C from New Jersey Semiconductor is a Bipolar Junction Transistor with Base Emitter Saturation Voltage 2.5 to 4 V, Collector Base Voltage 100 V, Collector Emitter Voltage 100 V, Continuous Collector Current 12 A, DC Current Gain 750 to 1000. Tags: Through Hole, NPN Transistor. More details for BDW93C can be seen below.

Product Specifications

Product Details

  • Part Number
    BDW93C
  • Manufacturer
    New Jersey Semiconductor
  • Description
    100 V, 12 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Base Emitter Saturation Voltage
    2.5 to 4 V
  • Collector Base Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    12 A
  • DC Current Gain
    750 to 1000
  • Industry
    Industrial, Commercial
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Through Hole View all
  • Package
    TO-220AB
  • Note
    Darlington Transistor

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