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BDX53C

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BDX53C Image

The BDX53C from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 2.5 V, Emitter Cut off Current 2 mA, Collector Base Voltage 100 V, Collector Cut off Current 200 µA. Tags: Through Hole, NPN Transistor. More details for BDX53C can be seen below.

Product Specifications

Product Details

  • Part Number
    BDX53C
  • Manufacturer
    New Jersey Semiconductor
  • Description
    100 V, 8 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    2.5 V
  • Emitter Cut off Current
    2 mA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    200 µA
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    8 A
  • Pulse Collector Current
    12 A
  • DC Current Gain
    750
  • Industry
    Industrial, Commercial
  • Power Dissipation
    60 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220
  • Application
    General-purpose amplifier and low speed switching applications
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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